Monovacancies in 3C and 4H SiC

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 244-247

  Furthmuller J ^a   Zywietz, A ^a   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

3C and 4H SiC; First principles; Monovacancies

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL SYMMETRY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; SEMICONDUCTING SILICON COMPOUNDS;

FIRST-PRINCIPLES CALCULATIONS;

SILICON CARBIDE;

EID: 0032645091     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00511-X     Document Type: Article

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