Post-implantation annealing of SiC studied by slow-positron spectroscopies

Journal of Physics Condensed Matter

Volumn 10, Issue 5, 1998, Pages 1147-1156

  Brauer, G ^a   Anwand, W ^a   Coleman, P G ^b   Stormer J ^c   Plazaola, F ^d   Campillo, J M ^d   Pacaud, Y ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF EAST ANGLIA   (United Kingdom)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^d UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001374507     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/5/022     Document Type: Article

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