Growth of GaInNAs by plasma assisted molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 618, Issue , 2000, Pages 315-320

  Gotthold, D W ^a   Govindaraju, S ^a   Holmes A L , Jr ^a   Streetman, B G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INERT GASES; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

GROWTH TEMPERATURES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0034451720     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-618-315     Document Type: Conference Paper

References (22)