Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 145-152

  Xin, H P ^a   Kavanagh, K L ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM INDIUM NITROGEN ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033908931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00415-7     Document Type: Article

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