More exact method of determination of the trap concentration of deep levels: Application to molecular beam epitaxy-grown, low temperature GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2019-2024

  Halder, N C ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844455395     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591032     Document Type: Article

References (2)

1. D. C. Look, Z.-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, and C. E. Stutz, J. Appl. Phys. 76, 1029 (1994).
2. D. C. Look, Z.-Q. Fang, and J. R. Sizelove, J. Appl. Phys. 77, 1407 (1995).