Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2

Applied Physics Letters

Volumn , Issue , 1995, Pages 1669-

  Stathis, J H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449004420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (0)