New fundamental defects in a-SiO2

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 I, 1999, Pages 1544-1552

  Karna, Shashi P ^a   Kurtz, Henry A ^b   Shedd, Walter M ^a   Pugh, Robert D ^a   Singaraju, B K ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b University of Memphis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL ATOMIC STRUCTURE; POINT DEFECTS; QUANTUM THEORY; SILICA;

BORDER TRAP PRECURSOR; OXIDE SWITCHING TRAP; SPIN PROPERTIES;

RADIATION EFFECTS;

EID: 0033328606     PISSN: 00189499     EISSN: None     Source Type: None    
DOI: 10.1109/23.819119     Document Type: Article

References (44)