Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing

Integrated Ferroelectrics

Volumn 31, Issue 1-4, 2000, Pages 341-350

  Hartner, W ^a   Bosk, P ^a   Schindler, G ^a   Schroeder, H ^a   Waser, R ^a   Dehm, C ^a   Mazure C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Deuterium; Ferroelectrics; Forming gas anneal; Hydrogen; SBT; SrBi2Ta2O9; Top Electrode

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITORS; DEGRADATION; ELECTRODES; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; STRONTIUM COMPOUNDS; THIN FILM DEVICES; X RAY DIFFRACTION ANALYSIS;

FORMING GAS ANNEALING; STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC THIN FILMS;

EID: 0034449271     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580008215667     Document Type: Conference Paper

References (26)