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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 SUPPL. B, 1997, Pages 5904-5907

Role of excess Bi in SrBi2Ta2O9 thin film prepared using chemical liquid deposition and sol-gel method

(5) Koiwa, Ichiro a Okada, Yukihisa a Mita, Juro a Hashimoto, Akira a Sawada, Yoshihiro b

a OKI ELECTRIC INDUSTRY CO (Japan)

b TOKYO OHKA KOGYO CO LTD (Japan)

Author keywords

Bi layered structure; Crystallization process; Excess Bi; Ferroelectric thin films; SrBi2Ta2O9

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; DEPOSITION; FERROELECTRICITY; SOL-GELS; STOICHIOMETRY; STRONTIUM COMPOUNDS; THIN FILMS;

CHEMICAL LIQUID DEPOSITION; STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC MATERIALS;

EID: 0031223596 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.5904 Document Type: Article

Times cited : (41)

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