Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 PART B, 1998, Pages 5189-5191

  Shin, Dong Suk ^a,b   Lee, Ho Nyung ^a   Lee, Chang Woo ^c   Kim, Yong Tae ^a   Choi, In Hoon ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Kookmin University   (South Korea)

Author keywords

Capacitor; CeO2; Ferroelectric; Gate structure; Leakage current; Morphology; Pt top electrode; SrBi2Ta2O9

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; DIELECTRIC FILMS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PHASE TRANSITIONS; PLATINUM; STRONTIUM COMPOUNDS;

FERROELECTRIC CAPACITOR; GATE STRUCTURE; MORPHOLOGICAL CHANGES;

MORPHOLOGY;

EID: 0032155184     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5189     Document Type: Article

References (8)

1. C. A. Paz de Araujo, J. D. Cuchiaro, L. M. McMillan, M. C. Scott and J. F. Scott: Science 347 (1995) 627
2. D. Y. Chen, M. Azuma, L. D. McMillan and C. A-Paz de Araujo: Proc. 9th IEEE Int. Symp. on Application of Ferroelectrics (1995) p. 25.
3. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Appl. Phys. Lett. 65 (1994) 1522
4. T. Noguchi, T. Hase and Y. Miyasaka: Appl. Phys. Lett. 66 (1995) 9
5. T. Noguchi, T. Hase and Y. Miyasaka: Jpn. J. Appl. Phys. 35 (1996) 4900
6. Yong Tae Kim and Dong Suk Shin: Appl. Phys. Lett. 71 (1997) 3507
7. D. S. Shin, Y. H. Han and Y. T. Kim: Ext. Abstr. 1997 Int. Conf. Solid State Devices & Materials (Business Center for Academic Societies Japan, Tokyo, 1997) p. 32
8. D. S. Shin, H. N. Lee, Y. T. Kim, In. Hoon. Choi and B. H. Kim: to be published in Jpn. J. Appl. Phys.