Role of recovery anneals for chemical solution deposition (CSD) based SrBi2Ta2O9, (SBT) thin films

Integrated Ferroelectrics

Volumn 22, Issue 1-4, 1998, Pages 23-33

  Hartner, Walter ^a   Schindler, Günther ^a   Weinrich, Volker ^a   Nagel, Nicolas ^a   Engelhardt, Manfred ^a   Joshi, Vikram ^b   Solayappan, Narayan ^b   Derbenwick, Gary ^b   Dehm, Christine ^a   Mazuré, Carlos ^a  

^a SIEMENS AG   (Germany)

^b Symetrix Corporation   (United States)

Author keywords

Electrode anneals; Ferroelectric thin films; Post anneals; Recovery anneals; RIE; SBT; SrBi2Ta2O9

Indexed keywords

ANNEALING; CAPACITORS; DEGRADATION; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; PLATINUM; STRONTIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHEMICAL SOLUTION DEPOSITION (CSD); STRONTIUM BISMUTH TANTALATE;

DIELECTRIC FILMS;

EID: 0032319876     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808208026     Document Type: Article

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