Material and n-p junction characteristics of As- and Sb-implanted SiC

Diamond and Related Materials

Volumn 9, Issue 11, 2000, Pages 1887-1896

  Tucker, Jesse B ^a   Rao, Mulpuri V ^a   Holland, O W ^b   Chi, P H ^c   Braga, G C B ^d   Freitas Jr , J A ^d   Papanicolaou, N ^d  

^a Krasnow Institute for Advanced Study   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; CARRIER CONCENTRATION; CRYSTAL LATTICES; EPITAXIAL GROWTH; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTITUTION REACTIONS;

SCHOTTKY CAPACITANCE-VOLTAGE PROFILING;

AMORPHOUS FILMS;

EID: 0034322539     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00340-X     Document Type: Article

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