Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 259-262

  Kalinina, E V ^a,b   Kholujanov, G F ^a   Zubrilov, A S ^a,b   Tsvetkov, D V ^a   Vatnik, M P ^a   Soloviev, V A ^b   Tretjakov, V D ^b   Kong, H ^c   Dmitriev, V A ^c  

^a Cree Research EED   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Aluminium; Ion doping; p n junction; Silicon carbide

Indexed keywords

ALUMINUM; CATHODOLUMINESCENCE; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON CARBIDE;

ION DOPING;

HETEROJUNCTIONS;

EID: 0005182003     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01988-5     Document Type: Article

References (5)

1. V.A. Dmitriev, L.M. Kogan, Ya.V. Morozenko, E.V. Tsarenkov, V.E. Chelnokov and A.E. Cherenkov, Sov. Phys. Semicond., 23 (1989) 23.
2. V.A. Dmitriev, L.M. Kogan, Ya.V. Morozenko, V.E. Chelnokov and A.E. Cherenkov, Sov. Tech. Phys. Lett., 16 (1990) 828.
3. E.V. Kalinina, A.V. Suvorov and G.F. Kholujanov, Fiz. Tekh. Poluprovodn., 9 (1980) 1099.
4. M. Ikeda, T. Hayakawa, S. Yamagwa, H. Matsunami and T. Tanaka, J. Appl. Phys., 50 (1979) 8215.
5. N.I. Kuznetsov and A.S. Zubrilov, J. Mater. Sci. Eng., B29 (1995) 181.