Elevated temperature nitrogen implants in 6H-SiC

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 885-892

  Gardner, Jason ^a   Rao, Mulpuri V ^a   Holland, O W ^b   Kelner, G ^c   Simons, David S ^d   Chi, Peter H ^d   Andrews, John M ^e   Kretchmer, J ^f   Ghezzo, M ^f  

^a George Mason University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e Nantron Associates   (United States)

^f GE GLOBAL RESEARCH   (United States)

Author keywords

Electrical activation; Ion implantation; Nitrogen; p n junction diode; Secondary ion mass spectrometry; Silicon carbide

Indexed keywords

EID: 0001267272     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666654     Document Type: Article

References (33)

1. J. Edmond, H. Kong and V. Dmitriev, Proc. Fifth Silicon Carbide and Related Materials Conf., 137 (Bristol: Inst. Phys., 1994), p. 465.
2. M. Bhatnagar and B.J. Baliga, IEEE. Trans. Electron Dev. 40, 654 (1993).
3. P.C. Neudeck, J. Electron. Mater 24, 283 (1995).
4. S. Sriram, R.C. Clarke, A.A. Burk, Jr., H.M. Hobgood, P.C. McMullin, P.A. Orphanos, R.R. Siegiej, T.J. Smith, C.D. Brandt, M.C. Driver and R.H. Hopkins, IEEE Electron Dev. Lett. 15, 458 (1994).
5. D. Alok, B.J. Baliga and P.K. McLarty, IEEE Electron Dev. Lett. 15, 424 (1994).
6. P.H. Yih and A.J. Steckl, Proc. Fifth Silicon Carbide and Related Materials Conf., (Bristol. Inst. Phys., 1994), p. 317.
7. D. Alok, B.J. Baliga and P.K. McLarty, IEDM 1993, Techn. Dig. p. 691.
8. R.F. Davis, G. Kelner, M. Shur, J.W. Palmour and J.A. Edmond, Proc. IEEE 79, 677 (1991).
9. O.J. Marsh and H.L. Dunlap, Rad. Eff. 6, 301 (1970).
10. V.A. Gudkov, G.A. Krysov and V.V. Makarov, Sov. Phys. Semicond. 18, 684 (1984) and other references therin.
11. J. Ryu, H.J. Kim and R.F. Davis, MRS Symp. Proc. 52, 165 (1986).
12. J.A. Edmond, S.R. Withrow, W. Wadlin and R.F. Davis, MRS Symp. Proc. 77, 193 (1987).
13. G. Pensl, R. Helbig, H. Zhang, G. Ziegler and P. Lanig, MRS Symp. Proc. 97, 195 (1987).
14. R.E. Avila, J.J. Kopanski and C.D Fung, J. Appl. Phys. 62, 3469 (1987).
15. J.A. Edmond, K. Das and R.F. Davis, J. Appl. Phys. 63, 922 (1988).
16. J. Ryu, H.J. Kim, J.T. Glass and R.F. Davis, J. Electron. Mater. 18, 157 (1989).
17. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla and H. Bakhru, IEEE Electron Dev. Lett. 13, 639 (1992).
18. Y. Hirano and T. Inada, J. Appl. Phys. 77, 1020 (1995).
19. M.V. Rao, P. Griffiths, O.W. Holland, G. Kelner, J.A. Freitas, Jr., D.S. Simons, P.H. Chi and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
20. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata and M. Watanabe, J. Electron. Mater. 24, 235 (1995).
21. M.V. Rao, P. Griffiths, J. Gardner, O.W. Holland, M. Ghezzo, J. Kretchner and G. Kelner, J. Electron. Mater. 25, 75 (1996).
22. D.M. Brown, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, G. Michon and G. Gati, Trans. 2nd High Temperature Electronics Conf., Vol. 1, eds. D.B. King and F.N. Thome, Charlotte, NC, June 5-10, 1994.
23. W. Xie, J.A. Cooper, Jr. and M.R. Melloch. IEEE Electron Dev. Lett. 15, 455 (1994).
24. J.F. Ziegler, J.P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, (New York: Pergamon, 1985).
25. Certain commercial materials are identified in the paper to specify adequately the experimental procedure. Such identifications do not imply that the materials identified are necessarily the best available for the purpose.
26. L.C. Northcliffe and R.F. Schilling,Nucl. Data Tables A7,233 (1970).
27. R.G. Wilson, Rad. Eff. 46, 141 (1980).
28. H.G. Bohn, J.M. Williams, C.J. McHargue and G.M. Begun, J. Mater. Res. 2, 107 (1987).
29. L.A. Christel and J.F. Gibbons, J. Appl. Phys. 52, 5050 (1981).
30. M. Yamanaka, H. Daimon, E. Sakuma, S. Misarwa, K. Endo and S. Yoshido, Jpn. J. Appl. Phys. 26, L533 (1987).
31. W. Suttrop. G. Pensl, W.J. Choyke, R. Stein and S. Leibenzeder, J. Appl. Phys. 72, 3708 (1992).
32. G.S. Kamath, Mater. Res. Bull. 4, S57 (1969).
33. P.G. Neudeck, D.J. Larkin, J.E. Starr, J.A. Powell, C.S. Salupo and L.G. Matus, IEEE Trans. Electron Dev. 41, 826 (1994).