Simple analytical expression for dose dependent ion-implanted Sb profiles using a joined half Gaussian function and one with exponential tail

Solid-State Electronics

Volumn 42, Issue 3, 1998, Pages 463-465

  Suzuki, Kunihiro ^c   Sudo, Ritsuo ^a   Feudel, Thomas ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; FUNCTIONS; ION IMPLANTATION; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

JOINED HALF GAUSSIAN FUNCTIONS;

MOSFET DEVICES;

EID: 0348047704     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. +-polysilicon gate on 35-A gate oxide, IEEE Electron Device Lett., 1993, EDL-14, 304-306.
2. Suzuki, K., Satoh, A. and Sugii, T., Counter doping into uniformly and heavily doped channel region of sub 0.1 μm SOI MOSFET's, IEEE Trans. Electron Device Letter, 1996, EDL-17, 1-3.
3. 2 implants in silicon, J. Electrochem. Soc., 1989, 136, 810-814.
4. Gibbons, J. F. and Mylroie, S., Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributions, Appl. Phys. Lett., 1973, 22, 568.