High-resistance layers in n-type 4H-silicon carbide by hydrogen ion implantation

Applied Physics Letters

Volumn 70, Issue 7, 1997, Pages 886-888

  Nadella, Ravi K ^a   Capano, M A ^b  

^a Wilberforce University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001547233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118304     Document Type: Article

References (13)

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