CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 889-894

  Wong, H P ^a   Chang, R T ^a   Crabbe, E ^b   Agnello, P D ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE PIXEL IMAGE SENSORS; CMOS LOGIC; CMOS TECHNOLOGY; DESIGN CONSIDERATIONS; DEVICE-SCALING; IMAGE SENSING; PROCESS MODIFICATIONS; SENSOR TECHNOLOGIES;

CMOS INTEGRATED CIRCUITS; LOGIC CIRCUITS;

IMAGE SENSORS;

EID: 0001178444     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662797     Document Type: Article

References (14)

1. E. R. Fossum, "Active pixel sensors: Are CCD dinosaurs?," Proc. SPIE, vol. 1900, p. 2, 1993.
2. , "CMOS image sensors. Electronic camera on a chip," in IEDM Tech. Dig., 1995, p. 17.
3. B. Ackland and A. Dickinson, "Camera on a chip," in Int. Solid State Circuits Conf., 1996, p. 22.
4. H.-S. Wong and W. Yang, "From photons to bits-Is electronic imaging at a watershed?," in Int. Solid State Circuits Conf., 1996, p. 108.
5. H.-S. Wong, "CMOS image sensors-Recent advances and device scaling considerations," in IEDM Tech. Dig., 1997.
6. L. Su et al., "A high performance 0.08-m CMOS," in Symp. VLSI Technol., 1996, p. 12.
7. H.-S. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 44, pp. 2131-2142, Dec. 1996.
8. S. Subbanna et al., "A high-density 6.9 sq.-m embedded SRAM cell in a high performance 0.25-m-generation logic technology," in IEDM Tech. Dig., 1996, p. 275.
9. , "200-mm process integration for a 0.15-m channel-length CMOS technology using mixed x-ray/optical lithography," in IEDM Tech. Dig., 1994, p. 695.
10. C. Koburger et al., "A half-micron CMOS logic generation," IBM J. Res. Develop., 1995, p. 215.
11. D. Holdsworth, R. Gerson, and A. Fenster, "A time delay integration charge-coupled device camera for slot-scanned digital radiography," Med. Phys., vol. 17, no. 5, p. 876, 1990.
12. B. Beecken and E. Fossum, "Determination of the conversion gain and the accuracy of its measurement for detector elements and arrays," J. Opt. Soc. Amer., vol. 35, no. 19, p. 3471, 1996.
13. H.-S. Wong, "Experimental verification of the mechanism of hot-carrierinduced photon emission in n-MOSFET's with an overlapping CCD gate structure," IEEE Electron Device Lett., vol. 13, p. 389, Aug. 1992.
14. H.-S. Wong, Y. Yao, and E. Schlig, "Time-delay-and-integration charge coupled device-Device design and applications," IBM J. Res. Develop., vol. 36, no. 1, p. 83, 1992.