A memory read-out approach for a 0.5 μm CMOS image sensor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3301, Issue , 1998, Pages 151-157

  Hoekstra, Willem ^a   Van Der Avoird, André ^a   Kole, Marq ^a   Schrooten, Guido G ^a   Schaeffer, Chris J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY DISSIPATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE; SENSITIVITY ANALYSIS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

FIXED PATTERN NOISE; GLOBAL DIFFERENTIAL VERSION; LOCAL DIFFERENTIAL VERSION; MEMORY READ-OUT APPROACH;

IMAGE SENSORS;

EID: 0032224741     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304557     Document Type: Conference Paper

References (6)

1. CMOS image sensors: Electronic camera-on-a-chip
2. CMOS image sensors eclipsing CCD's in visual information?
3. CMOS image sensors - Recent advances and device scaling considerations
4. A 16k 384-bit dynamic RAM
5. An addressable 256×256 photodiode image sensor array with an 8-bit digital output
6. CMOS image sensors for multimedia applications