NEW MOS IMAGE SENSOR OPERATING IN A NON-DESTRUCTIVE READOUT MODE.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1986, Pages 353-356

  Nakamura, T ^a   Matsumoto, K ^a   Hyuga, R ^a   Yusa, A ^a  

^a OLYMPUS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

CHARGE MODULATION DEVICE; NONDESTRUCTIVE READOUT MODE; PIXEL LEVEL AMPLIFICATION;

IMAGE SENSORS;

EID: 0022956136     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)