A Thermally Stable Ti-W Salicide for Deep-Submicron Logic with Embedded DRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 451-454

  Fujii, K ^a   Kikuta, K ^a   Enoue, K ^a   Mikagi, K ^a   Chikaki, S ^a   Kikkawa, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; COMPUTER CIRCUITS; SILICIDES; TITANIUM ALLOYS; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; LOGIC CIRCUITS; PHASE TRANSITIONS; RANDOM ACCESS STORAGE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; TUNGSTEN; ULSI CIRCUITS;

DEEP SUB-MICRON; DEEP SUBMICRONS; DIFFUSION LAYERS; EMBEDDED DRAM; HIGH THERMAL STABILITY; LOW RESISTIVITY; METASTABLES; SALICIDES; THERMALLY STABLE; TITANIUM TUNGSTEN;

THERMODYNAMIC STABILITY; INTEGRATED CIRCUIT MANUFACTURE;

CMOS GATE; DEEP SUBMICRON LOGIC; DIFFUSION LAYER; DYNAMIC RANDOM ACCESS MEMORY; SHEET RESISTANCE; SILICATION; SILICIDE; TITANIUM TUNGSTEN SALICIDE;

EID: 0030421413     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553624     Document Type: Conference Paper

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