High performance 0.15 μm single gate Co salicide CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 34-35

  Yoshitomi, T ^a   Ohguro, T ^a   Saito, M ^a   Ono, M ^a   Morifuji, E ^a   Momose, H S ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; ELECTRIC VARIABLES CONTROL; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MOSFET DEVICES; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TITANIUM NITRIDE;

COBALT SALICIDE; SHORT CHANNEL EFFECT;

CMOS INTEGRATED CIRCUITS;

EID: 0029715056     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)