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Volumn , Issue , 1999, Pages 555-558
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New MOVPE process for InP based HBT's using CBr4, TBA and TBP in N2 ambient
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
TERTIARYBUTYLPHOSPHINE;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0032645474
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (4)
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References (8)
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