Evaluation of base transit time in ultra-thin carbon-doped base InP/InGaAs heterojunction bipolar transistors

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1413-1415

  Ito, H ^a   Yamahata, S ^a   Kurishima, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Heterojunction bipolar transistors

Indexed keywords

CALCULATIONS; CARBON; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONTE CARLO METHODS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSIT TIME DEVICES;

BALLISTIC ELECTRON TRANSPORT; ELECTRON ACCELERATION; LINEAR DEPENDENCE; QUADRATIC DEPENDENCE; QUASI BALLISTIC ELECTRON MOTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030192481     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960914     Document Type: Review

References (12)

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