Heavily carbon doped base InP/InGaAs heterojunction bipolar transistors grown by two-step metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 6139-6144

  Ito, Hiroshi ^a   Yamahata, Shoji ^a   Shigekawa, Naoteru ^a   Kurishima, Kenji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Carbon doping; HBTs; Hydrogenation; InGaAs; InP; MOCVD

Indexed keywords

HOLE CONCENTRATIONS; HYDROGEN PERMEABILITY; VAN DER PAUW METHOD;

ANNEALING; CARBON; DIFFUSION IN SOLIDS; HYDROGEN; HYDROGENATION; MECHANICAL PERMEABILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030393907     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6139     Document Type: Article

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