CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 349-354

  Benchimol, J L ^a   Mba, J ^a   Duchenois, A M ^a   Sermage, B ^a   Launay, P ^a   Caffin, D ^a   Meghelli, M ^a   Juhel, M ^a  

^a ORANGE LABS   (France)

Author keywords

Chemical beam epitaxy; Digital circuit; Doping; Heterojunction bipolar transistor

Indexed keywords

CARBON; CHEMICAL BEAM EPITAXY; DIGITAL CIRCUITS; ELECTRIC CONDUCTIVITY OF SOLIDS; PRESSURE EFFECTS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

INDIUM GALLIUM ARSENIDE; SILICON TETRABROMIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032099696     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00094-3     Document Type: Article

References (7)

1. S.L. Jackson, M.T. Fresina, J.E. Baker, G.E. Stillman, App. Phys. Lett. 64 (1994) 2867.
2. E.A. Beam III, H.F. Chau, J. Crystal Growth 164 (1996) 389.
3. J.L. Benchimol, M. Juhel, M. Petitjean, M. Ancilotti, J. Vac. Sci. Technol. B 13 (1995) 55.
4. R.A. Hamm, S. Chandrasekhar, L. Lunardi, M. Geva, R. Malik, D. Humphrey, R. Ryan, J. Crystal Growth 164 (1996) 362.
5. B. Sermage, J.L. Benchimol, J.C. Michel, F. Alexandre, P. Launay, D. Caffin, Proc. of the 8th Int. Conf. on InP and Related Materials, 1996, p. 572.
6. K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, Y. Matsuoka, Jpn J. Appl. Phys. 34 (1995) 1221.
7. J. Godin, P. André, J.L. Benchimol, P. Desrousseaux, A.M. Duchenois, A. Konczykowska, P. Launay, M. Meghelli, M. Riet, GaAs IC 97 Symp., Anaheim, CA, 12-15 Oct. 1997.