Performance and stability of MOVPE-grown carbon-doped InP/InGaAs HBT's dehydrogenated by an anneal after Emitter Mesa formation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1353-1358

  Kurishima, Kenji ^a   Yamahata, Shoji ^a   Nakajima, Hiroki ^a   Ito, Hiroshi ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Carbon doping; HBT; Hydrogen passivation; InGaAs; InP; Reliability

Indexed keywords

EID: 0002269463     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1353     Document Type: Article

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