Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 559-562

  Benchimol, J L ^a   Mba, J ^a   Duchenois, A M ^a   Berdaguer, P ^a   Sermage, B ^a   Le Roux, G ^a   Blayac, S ^a   Riet, M ^a   Thuret, J ^a   Gonzalez, C ^a   Andre, P ^a  

^a OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

SHEET RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032646336     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)