Compositionally graded C-doped In1-XGaXAs base in InP/InGaAs D-HBTs grown by MOCVD with low base sheet resistance and high current gain

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 641-644

  Ohkubo, M ^a   Osabe, J ^a   Ikeda, N ^a   Ninomiya, T ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPOSITION EFFECTS; ELECTRIC RESISTANCE MEASUREMENT; GAIN MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES;

BASE SHEET RESISTANCE; VAN DER PAUW METHOD;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030704087     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)