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Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 25-30

Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE

(3) Keiper, D a Westphalen, R a Landgren, G a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Carbon; CBr4; GaInAs : C; InGaAs : C; Metalorganic VPE; Nitrogen

Indexed keywords

BROMINE COMPOUNDS; CARBON; CARRIER CONCENTRATION; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

CARBON TETRABROMIDE; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY (LP-MOVPE);

SEMICONDUCTOR GROWTH;

EID: 0033079880 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00903-8 Document Type: Article

Times cited : (14)

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