Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGe HBT DC and HF characteristics

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1747-1752

  Malm, B Gunnar ^a   Grahn, Jan V ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SENSITIVITY ANALYSIS;

TRANSIENT ENHANCED DIFFUSIONS (TED);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034291495     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00130-1     Document Type: Article

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