Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1999, Pages 105-108

  Bartels, M ^a   Decker, S ^a   Neinhus, B ^a   Bach, K H ^a   Schueppen, A ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CIRCUIT THEORY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; IMPACT IONIZATION; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES; VOLTAGE MEASUREMENT;

COLLECTOR CURRENT; COMPREHENSIVE HYDRODYNAMIC SIMULATION; EARLY VOLTAGE; GENERALIZED HYDRODYNAMIC MODEL; IDEALITY FACTOR; NONLOCAL SOFT THRESHOLD LUCKY ELECTRON MODEL; SILICON GERMANIUM; TRANSPORT PARAMETERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033281250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)