A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 728-731

  Grahn, J V ^a   Malm, B G ^a   Mohadjeri, B ^a   Pejnefors, J ^a   Sanden, M ^a   Wang, Y B ^a   Radamson, H H ^a   Jonsson, P ^a   Jargelius, M ^a   Fosshaug, H ^a   Linder, M ^a   Landgren, G ^a   Ostling, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOSPHORUS; POLYSILICON; SILICON ALLOYS;

DESIGN RULES; DEVICE DESIGN; DEVICE PROPERTIES; HIGH SPEED; INTRINSIC DEVICE; LOADING EFFECTS; PHOSPHORUS-DOPED; SIGE EPITAXIAL GROWTH;

LOADING;

EID: 84907888773     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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