2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 131-140

  Hashim, Md R ^a   Lever, R F ^a   Ashburn, P ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002032343     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00195-6     Document Type: Article

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