Integration and design issues in combining very-high-speed silicon-germanium bipolar transistors and ULSI CMOS for system-on-a-chip applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 845-848

  Subbanna, S ^a   Freeman, G ^a   Ahlgren, D ^a   Greenberg, D ^a   Harame, D ^a   Dunn, J ^a   Herman, D ^a   Meyerson, B ^a   Greshishchev, Y ^a   Schvan, P ^a   Thornberry, D ^a   Sakamoto, G ^a   Tayrani, R ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; COST EFFECTIVENESS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MICROPROCESSOR CHIPS; NETWORK PROTOCOLS; SEMICONDUCTING SILICON COMPOUNDS; ULSI CIRCUITS;

BICMOS TECHNOLOGY; NETWORK COMMUNICATION; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033314190     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)