Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

Superlattices and Microstructures

Volumn 28, Issue 3, 2000, Pages 189-198

  Fu, Y ^a   Willander, M ^a   Dutta, A ^b   Oda, S ^b  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; NONLINEAR EQUATIONS; POISSON DISTRIBUTION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS;

CARRIER CONDUCTION; DRAIN BIAS EFFECT; SINGLE ELECTRON TRANSISTOR; TUNNELING CURRENT; ZERO GATE BIAS;

TRANSISTORS;

EID: 0034273733     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0910     Document Type: Article

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