Mechanical tuning of tunnel gaps for the assembly of single-electron transistors

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1461-1463

  Carlsson, Sven Bertil ^a   Junno, Tobias ^a   Montelius, Lars ^a   Samuelson, Lars ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROCHEMICAL ELECTRODES; GOLD; TUNING;

SINGLE-ELECTRON TRANSISTORS (SET); TUNNEL GAPS;

TRANSISTORS;

EID: 0032606854     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124725     Document Type: Article

References (20)

1. D. V. Averin and K. K. Likharev, J. Low Temp. Phys. 62, 345 (1986).
2. M. W. Keller, J. M. Martinis, N. M. Zimmerman, and A. H. Steinbach, Appl. Phys. Lett. 69, 1804 (1996).
3. R. J. Schoelkopf, P. Wahlgren, A. A. Kozhevnikov, P. Delsing, and D. E. Prober, Science 280, 1238 (1998).
4. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
5. O. J. Dolan, Appl. Phys. Lett. 31, 337 (1977).
6. For a review see H. Ahmed and K. Nakazato, Microelectron. Eng. 32, 297 (1996); Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992).
7. For a review see H. Ahmed and K. Nakazato, Microelectron. Eng. 32, 297 (1996); Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992).
8. The charging energy also determines the width of the Coulomb blockade region in the current-voltage characteristic.
9. T. Junno, S.-B. Carlsson, Hongqi Xu, L. Montelius, and L. Samuelson, Appl. Phys. Lett. 72, 548 (1998).
10. C. J. Muller, J. M. van Ruitenbeck, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992).
11. J. M. Krans, C. J. Muller, I. K. Yanson, Th. C. M. Govaert, R. Hesper, and J. M. van Ruitenbeck, Phys. Rev. B 48, 14721 (1993).
12. N. van der Post, E. T. Peters, I. K. Yanson, and J. M. van Ruitenbeck, Phys. Rev. Lett. 73, 2611 (1994).
13. T. Junno, K. Deppert, L. Montelius, and L. Samuelson, Appl. Phys. Lett. 66, 3627 (1995).
14. The dimensions and geometry of our electrodes and island are comparable to those of a very sharp scanning tunneling microscope tip close to a surface. In the latter case a one-atom tunneling path is dominating.
15. J. R. Hahn, Y. A. Hong, and H. Kang, Appl. Phys. A: Mater. Sci. Process, 66, 467 (1998).
16. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963).
17. J. P. Kauppinen and J. P. Pekola, Phys. Rev. Lett. 77, 3889 (1996).
18. M. Amman, R. Wilkins, E. Ben-Jacob, P. D. Maker, and R. C. Jaklevic, Phys. Rev. B 43, 1146 (1991).
19. Single electron transistor parameter fitting program. Master thesis, Martin Birgersson Lund University, 1997.
20. J. R. Heath, P. J. Kuekes, G. S. Snider, and R. S. Williams, Science 280, 1716 (1998).