Single-electron memory using carrier traps in a silicon nitride layer

Applied Physics Letters

Volumn 74, Issue 23, 1999, Pages 3555-3557

  Sunamura, H ^a   Sakamoto, T ^a   Nakamura, Y ^a   Kawaura, H ^a   Tsai, J S ^a   Baba, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000184217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124159     Document Type: Article

References (10)

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