A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 429-432

  Amakawa, Shuhei ^a   Kanda, Kouichi ^a   Fujishima, Minoru ^a   Hoh, Koichiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Circuit simulation; Floating dot memory; FN tunneling; Single electron transistor

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MONTE CARLO METHODS; RANDOM PROCESSES; SEMICONDUCTOR DEVICE MODELS;

SINGLE ELECTRON FLOATING DOT MEMORY; SINGLE ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 0032607383     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.429     Document Type: Article

References (18)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki: IEEE Trans. Electron Devices 41 (1994) 1628.
2. J. J. Welser, S. Tiwari, S. Rishton, K. Y. Lee and Y. Lee: IEEE Electron Device Lett. 18 (1997) 278.
3. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano and N. Yokoyama: Appl. Phys. Lett. 70 (1997) 1742.
4. K. Yano, T. Ishii, T. Sano, T. Mine, F. Murai, T. Kure and K. Seki: Dig. Tech. Papers Int. Solid-State Circuits Conf. (IEEE, 1998) p. 344.
5. S. Amakawa, H. Majima, H. Fukui, M. Fujishima and K. Hoh: IEICE Trans. Electron. E81-C (1998) 21.
6. K. Nakazato, R. J. Blaikie and H. Ahmed: J. Appl. Phys. 75 (1994) 5123.
7. K. K. Likharev: IEEE Trans. Magn. 23 (1987) 1142.
8. H. Tamura and S. Hasuo: J. Appl. Phys. 62 (1987) 3036.
9. R. H. Fowler and L. Nordheim: Proc. R. Soc. London Ser. A 119 (1928) 173.
10. M. Kirihara, N. Kuwamura, K. Taniguchi and C. Hamaguchi: Ext. Abstr. 1994 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1994) p. 328.
11. N. S. Bakhvalov, G. S. Kazacha, K. K. Likharev and S. I. Serdyukova: Zh. Eksp. & Teor. Fiz. 95 (1989) 1010. Translation: Sov. Phys.-JETP 68 (1989) 581.
12. N. S. Bakhvalov, G. S. Kazacha, K. K. Likharev and S. I. Serdyukova: Zh. Eksp. & Teor. Fiz. 95 (1989) 1010. Translation: Sov. Phys.-JETP 68 (1989) 581.
13. H. Nakashima and K. Uozumi: Jpn. J. Appl. Phys. 36 (1997) L1315.
14. S. Amakawa, M. Fujishima and K. Hoh: to be appeared in 6th Int. Workshop on Computational Electronics (1998).
15. J. G. Simmons: J. Appl. Phys. 34 (1963) 1793.
16. J. G. Simmons, J. Appl. Phys. 35 (1964) 2472.
17. A. N. Korotkov: Phys. Rev. B 49 (1994) 11508.
18. D. V. Averin: Phys. Rev. B 50 (1994) 8934.