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Volumn 26, Issue 5, 1999, Pages 289-297

Suppression of the tunneling effect by shallow junctions in field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FUNCTIONS; TUNNEL JUNCTIONS;

EID: 0033324153     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0780     Document Type: Article
Times cited : (4)

References (11)
  • 2
    • 84941448723 scopus 로고
    • Design and experimental technology for 0.1 μ m gate length low temperature operation FET's
    • Sai-Halasz et al. G. A. Design and experimental technology for 0.1 μ m gate length low temperature operation FET's. IEEE Electron Device Lett. EDL-8:1987;463-466.
    • (1987) IEEE Electron Device Lett. , vol.8 , pp. 463-466
    • Sai-Halasz et al., G.A.1
  • 8
    • 0031703501 scopus 로고    scopus 로고
    • Effect of interface roughness on I-V relation of AlGaAs/GaAs heterojunction field effect transistor
    • Fu Y., Mu Y. M., Willander M. Effect of interface roughness on I-V relation of AlGaAs/GaAs heterojunction field effect transistor. Superlatt. Microstruct. 23:1998;417-425.
    • (1998) Superlatt. Microstruct. , vol.23 , pp. 417-425
    • Fu, Y.1    Mu, Y.M.2    Willander, M.3
  • 9
    • 0012099005 scopus 로고
    • Ballistic electron transport through a coupled quantum wire system
    • Wang J., Wang Y. J., Guo H. Ballistic electron transport through a coupled quantum wire system. Phys. Rev. B46:1992;2420-2427.
    • (1992) Phys. Rev. , vol.46 , pp. 2420-2427
    • Wang, J.1    Wang, Y.J.2    Guo, H.3
  • 11
    • 4243935992 scopus 로고
    • Xu H. Phys. Rev. B50:1994;8469.
    • (1994) Phys. Rev. , vol.50 , pp. 8469
    • Xu, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.