Silicon oxidation and ultra-thin oxide formation on silicon studied by infrared absorption spectroscopy

Physica Status Solidi (A) Applied Research

Volumn 175, Issue 1, 1999, Pages 77-88

  Queeney, K T ^a   Chabal, Y J ^a   Weldon, M K ^a   Raghavachari, Krishan ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; INFRARED SPECTROSCOPY; OXIDATION; PASSIVATION; SEMICONDUCTING FILMS; SILICA; SURFACE PROPERTIES; ULTRATHIN FILMS; WATER;

ULTRATHIN PASSIVATING LAYERS;

SEMICONDUCTING SILICON;

EID: 0032594880     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199909)175:1<77::AID-PSSA77>3.0.CO;2-F     Document Type: Article

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