Comparison between device simulators for gate current calculation in ultra-thin gate oxide n-MOSFETs

IEICE Transactions on Electronics

Volumn E83-C, Issue 8, 2000, Pages 1194-1202

  Cassan, Eric ^a,b   Galdin, Sylvie ^a,b   Dollfus, Philippe ^a,b   Hestqt, Patrice ^a,b  

^a UNIV PARIS SUD   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIMULATOR; DIRECT TUNNELING GATE CURRENT; DRIFT DIFFUSION; ENERGY BALANCE; GATE CURRENT; ULTRATHIN GATE OXIDE;

DIFFUSION; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; MONTE CARLO METHODS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 0034249988     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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