Monte Carlo study of Si-n-MOSFETS including the quantization of carriers

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 1997-2004

  Ohkura, Yasuyuki ^a   Kimura, Shin'ichiro ^a   Ho, Shrin ^a   Ihara, Sigeo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES;

CARRIER QUANTIZATION;

MOSFET DEVICES;

EID: 0032207038     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00164-6     Document Type: Article

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