23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 447-450

  Huber, D ^a   Bitter, M ^a   Romier, S ^a   Schnyder, I ^a   Bauknecht, R ^a   Morf, T ^a   Bergamaschi, C ^a   Jackel, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORECEIVER; TRANSIMPEDANCE;

BANDWIDTH; ELECTRIC IMPEDANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INTEGRATED OPTOELECTRONICS;

EID: 0032300091     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)