20Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

Electronics Letters

Volumn 33, Issue 7, 1997, Pages 624-626

  Hurm, V ^a   Benz, W ^a   Bronner, W ^a   Fink, T ^a   Kaufel, G ^a   Kohler K ^a   Lao, Z ^a   Ludwig, M ^a   Raynor, B ^a   Rosenzweig, J ^a   Schlechtweg, M ^a   Windscheif, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Integrated optoelectronics; Optical receivers

Indexed keywords

BANDWIDTH; FREQUENCY RESPONSE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

EYE DIAGRAMS; METAL SEMICONDUCTOR METAL (MSM) PHOTODIODES; PHOTORECEIVERS;

INTEGRATED OPTOELECTRONICS;

EID: 0031102601     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970379     Document Type: Article

References (8)

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