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Volumn 35, Issue 11, 1999, Pages 897-898

Monolithic, high transimpedance gain (3.3 kΩ), 40 Gbit/s InP-HBT photoreceiver with differential outputs

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032630675     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990597     Document Type: Article
Times cited : (23)

References (8)
  • 1
    • 0032092864 scopus 로고    scopus 로고
    • High-sensitivity 40Gbit/s photoreceiver using GaAs PHEMT distributed amplifiers
    • LEGROS, E., VUYE, S., GIRAUDET, L., and JOLY, C.: 'High-sensitivity 40Gbit/s photoreceiver using GaAs PHEMT distributed amplifiers', Electron. Lett., 1998, 34, pp. 1351-1352
    • (1998) Electron. Lett. , vol.34 , pp. 1351-1352
    • Legros, E.1    Vuye, S.2    Giraudet, L.3    Joly, C.4
  • 5
    • 33645277600 scopus 로고
    • Integrated high frequency low-noise current-mode optical transimpedance preamplifier: Theory and practice
    • VANISRI, T., and TOUMAZOU, C.: 'Integrated high frequency low-noise current-mode optical transimpedance preamplifier: Theory and practice', IEEE J. Solid-State Circuits, 1995, SC-30, pp. 677-685
    • (1995) IEEE J. Solid-state Circuits , vol.SC-30 , pp. 677-685
    • Vanisri, T.1    Toumazou, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.