-
1
-
-
0031331628
-
High power modulator driver IC's up to 30 Gb/s with AlGaAs/GaAs HEMT's
-
Z. Lao, A. Thiede, U. Nowotny, V. Hurm, W. Bronner, M. Rieger-Motzer, J. Hornung, G. Kaufel, and A. Hülsmann, "High power modulator driver IC's up to 30 Gb/s with AlGaAs/GaAs HEMT's," in Proc. IEEE GaAs IC Symp., Tech. Dig. Papers, 1997, pp. 223-226.
-
(1997)
Proc. IEEE GaAs IC Symp., Tech. Dig. Papers
, pp. 223-226
-
-
Lao, Z.1
Thiede, A.2
Nowotny, U.3
Hurm, V.4
Bronner, W.5
Rieger-Motzer, M.6
Hornung, J.7
Kaufel, G.8
Hülsmann, A.9
-
2
-
-
0031382437
-
InP/InGaAs HBT IC's for 40 Gbit/s optical transmission systems
-
H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, and R. Takeyari, "InP/InGaAs HBT IC's for 40 Gbit/s optical transmission systems," in Proc. IEEE GaAs IC Symp, Tech. Dig. Papers, 1997, pp. 215-218.
-
(1997)
Proc. IEEE GaAs IC Symp, Tech. Dig. Papers
, pp. 215-218
-
-
Suzuki, H.1
Watanabe, K.2
Ishikawa, K.3
Masuda, H.4
Ouchi, K.5
Tanoue, T.6
Takeyari, R.7
-
3
-
-
0031355293
-
A 20 Gb/s InP DHBT driver IC with high output voltage swing for direct and external laser modulation
-
M. Meghelli, M. Bouché, and A. Konczykowska, "A 20 Gb/s InP DHBT driver IC with high output voltage swing for direct and external laser modulation," in Proc. IEEE BCTM, 1997, pp. 113-115.
-
(1997)
Proc. IEEE BCTM
, pp. 113-115
-
-
Meghelli, M.1
Bouché, M.2
Konczykowska, A.3
-
4
-
-
0031170699
-
20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology
-
R. Schmid, T. F. Meister, M. Neuhäuser, A. Felder, W. Bogner, M. Rest, J. Rupeter, and H.-M. Rein, "20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology," Electron. Lett., vol. 33, pp. 1135-1137, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 1135-1137
-
-
Schmid, R.1
Meister, T.F.2
Neuhäuser, M.3
Felder, A.4
Bogner, W.5
Rest, M.6
Rupeter, J.7
Rein, H.-M.8
-
5
-
-
3643066458
-
OEIC photoreceivers
-
Jan./Feb.
-
R. A. Metzger, "OEIC photoreceivers," Compound Semiconductor, pp. 18-20, Jan./Feb. 1996.
-
(1996)
Compound Semiconductor
, pp. 18-20
-
-
Metzger, R.A.1
-
6
-
-
0028422915
-
Long-wavelength receiver optoelectronic integrated circuit on 3-inch-diameter GaAs substrate grown by InP-on-GaAs heteroepitaxy
-
Y. Mihashi, K. Goto, E. Ishimura, M. Miyashita, T. Shimura, H. Nishiguchi, T. Kimura, T. Shiba, and E. Omura, "Long-wavelength receiver optoelectronic integrated circuit on 3-inch-diameter GaAs substrate grown by InP-on-GaAs heteroepitaxy," Japan J. Appl. Phys., Part 1, vol. 33, no. 5A, pp. 2599-2604, 1994.
-
(1994)
Japan J. Appl. Phys., Part 1
, vol.33
, Issue.5 A
, pp. 2599-2604
-
-
Mihashi, Y.1
Goto, K.2
Ishimura, E.3
Miyashita, M.4
Shimura, T.5
Nishiguchi, H.6
Kimura, T.7
Shiba, T.8
Omura, E.9
-
7
-
-
0031375724
-
Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
-
V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufel, K. Köhler, Z. Lao, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, and A. Thiede, "Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs," in Proc. IEEE GaAs IC Symp., Tech. Dig., 1997, pp. 197-200.
-
(1997)
Proc. IEEE GaAs IC Symp., Tech. Dig.
, pp. 197-200
-
-
Hurm, V.1
Benz, W.2
Bronner, W.3
Fink, T.4
Jakobus, T.5
Kaufel, G.6
Köhler, K.7
Lao, Z.8
Ludwig, M.9
Moglestue, C.10
Raynor, B.11
Rosenzweig, J.12
Schlechtweg, M.13
Thiede, A.14
-
8
-
-
0031071178
-
25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier IC's using AlGaAs/GaAs-HEMT's
-
Z. Lao, M. Berroth, V. Hurm, A. Thiede, R. Bosch, P. Hofmann, A. Hülsmann, C. Moglestue, and K. Köhler. "25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier IC's using AlGaAs/GaAs-HEMT's," in Proc. IEEE Int. Solid-State Circuits Conf, Dig. Tech. Papers, 1997, pp. 356-357.
-
(1997)
Proc. IEEE Int. Solid-State Circuits Conf, Dig. Tech. Papers
, pp. 356-357
-
-
Lao, Z.1
Berroth, M.2
Hurm, V.3
Thiede, A.4
Bosch, R.5
Hofmann, P.6
Hülsmann, A.7
Moglestue, C.8
Köhler, K.9
-
9
-
-
3242846356
-
Stability of an AlGaAs/GaAs/AlGaAs E/D-HEMT process with double pulse doping
-
chap. 11
-
T. Jakobus, W. Bronner, P. Hofmann, A. Hülsmann, G. Kaufel, K. Köhler, B. Landsberg, B. Raynor, J. Schneider, N. Grün, J. Windscheif, M. Berroth, and J. Hornung, "Stability of an AlGaAs/GaAs/AlGaAs E/D-HEMT process with double pulse doping," in Proc. Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser., chap. 11, no. 129, pp. 887-892, 1992.
-
(1992)
Proc. Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser.
, Issue.129
, pp. 887-892
-
-
Jakobus, T.1
Bronner, W.2
Hofmann, P.3
Hülsmann, A.4
Kaufel, G.5
Köhler, K.6
Landsberg, B.7
Raynor, B.8
Schneider, J.9
Grün, N.10
Windscheif, J.11
Berroth, M.12
Hornung, J.13
-
10
-
-
0028735467
-
Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links
-
M. Neuhäuser, H.-M. Rein, and H. Wemz, "Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links," IEEE BCTM, Dig. Tech. Papers, pp. 163-166, 1994.
-
(1994)
IEEE BCTM, Dig. Tech. Papers
, pp. 163-166
-
-
Neuhäuser, M.1
Rein, H.-M.2
Wemz, H.3
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