50 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 6-9

  Huber, D ^a   Bitter, M ^a   Gini, E ^a   Neiger, A ^a   Morf, T ^a   Bergamaschi, C ^a   Jackel, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSIMPEDANCE AMPLIFIERS;

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED OPTOELECTRONICS; LIGHT AMPLIFIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

PHOTODETECTORS;

EID: 0032685373     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)