Evidence for spatial distribution of traps in MOS systems after Fowler Nordheim stress

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 147-150

  Kerber, M ^a   Schwalke, U ^a,b   Innertsberger, G ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Corporate Research ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON TRAPS; INTERFACES (MATERIALS); STATIC ELECTRICITY; STRESS ANALYSIS;

FOWLER NORDHEIM STRESS; RECHARGEABLE TRAPS;

MOS CAPACITORS;

EID: 0033190236     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00358-5     Document Type: Article

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