Fully-depleted submicron soi for radiation hardened applications

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2304-2309

  Brady, F T ^a   Scott, T ^a   Brown, R ^a   Damato, J ^a   Haddad, N F ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY TRANSFER; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; RADIATION EFFECTS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSISTORS;

LINEAR ENERGY TRANSFER; RADIATION HARDENING; SINGLE EVENT UPSET;

RANDOM ACCESS STORAGE;

EID: 0028699525     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340580     Document Type: Article

References (10)

1. L.R. Hite, H. Lu, T.W. Houston, D.S. Hurta, and W.E. Bailey, “An SEU Resistant 256K SOI SRAM”, IEEE Trans. Nuclear Science, Vol. 39, No. 6, p. 2121 (1992).
2. M.L. Alles, S.E. Kerns, L.W. Massengill, J.E. Clark, K.L. Jones, and R.E. Lowther, “Body Tie Placement in CMOS/SOI Digital Circuits for Transient Radiation Environments”, IEEE Trans. Nuclear Science, Vol. 38, No. 6, p. 1259 (1991).
3. A. Edenfeld, L.K. Wang, J. Seliskar, and N.F. Haddad, 1991 IEEE International SOI Conference Proceedings, p. 130.
4. L.K. Wang, J. Seliskar, A. Edenfeld, O. Spencer, and N.F Haddad, Proceedings of the Fifth International Symposium on Silicon-On-Insulator Technology and Devices, p. 71 (1991).
5. N.F. Haddad, J.D. Mairnon, S. Doyle, L. Jacunski, T. Hoang, D. Lawson, D. Jallice, and T. Scott, “Radiation Hardened ULSI Technology and Design of IMSRAM”, presented at the 1994 NSREC.
6. F. T. Brady, N.F. Haddad, J.A. Miller, J. Seliskar, and L.K. Wang, “Temperature Sensitivity of Devices and Circuits Fabricated in Fully-Depleted Accumulation Mode SOI”, 1992 IEEE International SOI Conference Proceedings, p. 90.
7. F.T. Brady, N.F. Haddad, and L.K. Wang, “Effect of Total Dose Radiation on Device Self Latch Up”, 1992 IEEE International SOI Conference Proceedings, p. 88 (1992).
8. C.E. Schlier, N.F. Haddad, H.S. Witham, and P.M. Lenahan, “Recombination Centers in a Radiation-Hardened Field Insulator”, Journal of Radiation Effects Research and Engineering, Vol. 7, No. 7, (1989).
9. J.B. McKitterick, A. Caviglia, and W.P. Maszara, “Total Dose Hardness of Bonded SOI Wafers”, IEEE Transactions on Nuclear Science, Vol. 36, p. 2098 (1992).
10. Private communication with Mr. Harold Hughes, Naval Research Laboratory.