Investigation of floating body effects in silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 70, Issue 7, 1991, Pages 3912-3919

  Ouisse, T ^a   Ghibaudo, G ^b   Brini, J ^b   Cristoloveanu, S ^b   Borel, G ^a  

^a THOMSON TMS ^*  (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4344630576     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.349200     Document Type: Article

References (18)